| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 2.80 A |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.078 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 2.80 A |
| Rise Time | 95 ns |
| Input Capacitance (Ciss) | 150pF @5V(Vds) |
| Input Power (Max) | 1.25 W |
| Fall Time | 125 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.25W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1.01 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MGSF2N02ELT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
● Low RDS (ON) provides higher efficiency and extends battery life
● Miniature surface-mount package saves board space
● IDSS Specified at elevated temperature
● -55 to 150°C Operating temperature range
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Power MOSFET 20V 2.8A 85mOhm Single N-Channel SOT-23 Logic Level, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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