Overview
●The MHT1008N 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
●For additional information contact NXP® Semiconductor.
●MoreLess
●## Features
● Characterized with series equivalent large-signal impedance parameters and common source S-parameters
● Qualified for operation at 32 Vdc
● Integrated ESD protection
● 150°C case operating temperature
● 150°C die temperature capability
● RoHS Compliant
●Typical Applications
● Consumer cooking as PA driver
● Commercial cooking as PA driver
●## Features RF Performance Tables
●### Typical Performance
●VDD = 28 Vdc, IDQ = 110 mA
●Frequency
●(MHz)
● |
●Signal Type
● |
●Gps
●(dB)
● |
●PAE
●(%)
● |
●Pout
●(W)
●\---|---|---|---|---
●2400| CW| 18.5| 57.5| 12.5
●2450| 18.6| 56.3| 12.5
●2500| 18.3| 55.6| 12.5
●### Load Mismatch/Ruggedness
●Frequency
●(MHz)
● |
●Signal Type
● |
●VSWR
● |
●Pin
●(W)
● |
●Test
●Voltage
● |
●Result
●\---|---|---|---|---|---
●2450| CW| > 5:1
●at all Phase Angles| 26
●(3 dB Overdrive)| 32| No Device Degradation
