| TYPE | DESCRIPTION |
|---|
| Case/Package | V1-A-Pack |
| Power Dissipation | 695 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 695 W |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | 40 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
IGBT Module PT Single 1200V 220A 695W Chassis Mount V1A-PAK
IXYS Semiconductor
6 Pages / 0.3 MByte
IXYS Semiconductor
Igbt Module 1200V 150A Hex
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