| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -120 V |
| Current Rating | -30.0 A |
| Case/Package | TO-204-2 |
| Output Voltage | 120 V |
| Output Current | 30 A |
| Number of Positions | 2 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 30A |
| hFE Min | 1000 @20A, 5V |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 200000 mW |
| Input Voltage | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
● Collector to emitter voltage (Vce) of -120V
● Collector current (Ic) of -30A
● Power dissipation of 200W
● Operating junction temperature range from -55°C to 200°C
● Collector emitter breakdown Voltage of -120V
● Collector emitter saturation voltage of -3V at 20A collector current
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