| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 120 V |
| Current Rating | 50.0 A |
| Case/Package | TO-204-2 |
| Power Rating | 300 W |
| Output Voltage | 120 V |
| Output Current | 50 A |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 300 W |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 50A |
| hFE Min | 1000 |
| hFE Max | 18000 |
| Input Power (Max) | 300 W |
| DC Current Gain (hFE) | 18000 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| Input Voltage | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Size-Length | 38.86 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications.
● High DC current gain
● Monolithic construction with built-in base-emitter shunt resistor
ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
5 Pages / 0.11 MByte
ON Semiconductor
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ON Semiconductor
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