TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 4 MHz |
Number of Pins | 2 Pin |
Voltage Rating (DC) | 250 V |
Current Rating | 16.0 A |
Case/Package | TO-204-2 |
Number of Positions | 2 Position |
Polarity | NPN |
Power Dissipation | 250 W |
Breakdown Voltage (Collector to Emitter) | 250 V |
Thermal Resistance | 0.7℃/W (RθJC) |
Continuous Collector Current | 16A |
hFE Min | 25 |
hFE Max | 75 |
Input Power (Max) | 250 W |
DC Current Gain (hFE) | 75 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 250000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Material | Silicon |
Size-Length | 39.37 mm |
Size-Width | 26.67 mm |
Size-Height | 8.51 mm |
Operating Temperature | -65℃ ~ 200℃ |
The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
● Total harmonic distortion characterized
● High DC current gain
● Excellent gain linearity
● High SOA
ON Semiconductor
7 Pages / 0.16 MByte
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
1 Pages / 0.16 MByte
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