| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-3 |
| Power Rating | 150 W |
| Number of Positions | 2 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 115 W |
| Gain Bandwidth Product | 3 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 20 @4A, 4V |
| hFE Max | 70 |
| Input Power (Max) | 115 W |
| DC Current Gain (hFE) | 70 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 115000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 39.5 mm |
| Size-Width | 26.2 mm |
| Size-Height | 8.7 mm |
| Operating Temperature | 200℃ (TJ) |
Description
●The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.
●Features
●■ Low collector-emitter saturation voltage
●■ Complementary NPN - PNP transistors
●Applications
●■ General purpose
●■ Audio Amplifier
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