| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 2.5 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-204-2 |
| Number of Positions | 2 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 115 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Thermal Resistance | 1.52℃/W (RθJC) |
| Continuous Collector Current | 15A |
| hFE Min | 20 @4A, 4V |
| Input Power (Max) | 115 W |
| DC Current Gain (hFE) | 2 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 115000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -65℃ ~ 200℃ |
The MJ2955G is a -60V Silicon PNP Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
● Excellent safe operating area
● DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
● Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)
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