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MJB41CT4G
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MJB41CT4G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-263-3
Description:D2PAK NPN 100V 6A
Documentation:MJB41CT4G Datasheet (6 Pages)Package Outline Dimension on5 Page
Package Footprint Pad Layout on5 Page
Part Numbering System on1 Page6 Page
Pictures:
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MJB41CT4G Datasheet PDF (6 Pages)
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MJB41CT4G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Frequency3 MHz
Number of Pins3 Pin
Voltage Rating (DC)100 V
Current Rating6.00 A
Case/PackageTO-263-3
Number of Positions3 Position
PolarityNPN, PNP
Power Dissipation65 W
Breakdown Voltage (Collector to Emitter)100 V
Continuous Collector Current6A
hFE Min15 @3A, 4V
Input Power (Max)2 W
DC Current Gain (hFE)15
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)2000 mW
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MJB41CT4G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
MaterialSilicon
Size-Length10.29 mm
Size-Width9.65 mm
Size-Height4.83 mm
Operating Temperature-65℃ ~ 150℃ (TJ)
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MJB41CT4G Documents

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