| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 40 @4A, 1V |
| Input Power (Max) | 50 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile NPN MJB44H11T4 GP BJT from STMicroelectronics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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