| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 40 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -10.0 A |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 10A |
| hFE Min | 40 @4A, 1V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile PNP MJB45H11G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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