| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.00 A |
| Case/Package | TO-251-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 2A |
| hFE Min | 1000 @2A, 3V |
| hFE Max | 12000 |
| Input Power (Max) | 1.75 W |
| DC Current Gain (hFE) | 12000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 25MHz (Min) |
| Power Dissipation (Max) | 20 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.38 mm |
| Size-Height | 6.35 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS
●MJD112 (NPN)
●MJD117 (PNP)
●DPAK For Surface Mount Applications
●Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
●Features
●• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
●• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
●• Electrically Similar to Popular TIP31 and TIP32 Series
●• Pb−Free Packages are Available
ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
8 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.08 MByte
ON Semiconductor
13 Pages / 0.34 MByte
Samsung
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
Motorola
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Motorola
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
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