TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 2.00 A |
Case/Package | TO-252-3 |
Halogen Free Status | Halogen Free |
Output Voltage | 100 V |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.75 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Thermal Resistance | 71.4℃/W (RθJA) |
Continuous Collector Current | 2A |
hFE Min | 1000 |
hFE Max | 12000 |
Input Power (Max) | 1.75 W |
DC Current Gain (hFE) | 12000 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Gain Bandwidth | 25MHz (Min) |
Power Dissipation (Max) | 20 W |
Input Voltage | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.38 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
The MJD112G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
● Lead formed for surface-mount applications in plastic sleeves
● Monolithic construction with built-in base-emitter shunt resistors
● Complementary pairs simplifies designs
● Surface-mount replacements for TIP110 to TIP117 series
● AEC-Q101 qualified and PPAP capable
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