| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @2A, 3V |
| Input Power (Max) | 20 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 25MHz (Min) |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
The MJD112T4 is a NPN complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout. It has monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
● Good hFE linearity
● High fT frequency
ST Microelectronics
10 Pages / 0.37 MByte
ST Microelectronics
3 Pages / 0.11 MByte
ST Microelectronics
1 Pages / 0.13 MByte
CJ
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