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MJD112TF
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MJD112TF Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-252-3
Description:Trans Darlington NPN 100V 2A 1750mW 3Pin(2+Tab) DPAK T/R
Documentation:MJD112TF Datasheet (10 Pages)Package Outline Dimension on9 Page10 Page
Package Footprint Pad Layout on9 Page
Part Numbering System on1 Page8 Page10 Page
MJD112TF Application Note (13 Pages)
Pictures:
Symbol
Footprint
Pinout
Product Pictures
MJD112TF Datasheet PDF (10 Pages)
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MJD112TF Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Number of Positions3 Position
Power Dissipation1.75 W
Breakdown Voltage (Collector to Emitter)100 V
hFE Min1000 @2A, 3V
Input Power (Max)1.75 W
DC Current Gain (hFE)200
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Gain Bandwidth25MHz (Min)
Power Dissipation (Max)1750 mW
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MJD112TF Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length6.6 mm
Size-Width6.8 mm
Size-Height2.3 mm
Operating Temperature150℃ (TJ)
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MJD112TF Documents

MJD112TF Datasheet
ON Semiconductor
10 Pages / 0.14 MByte
MJD112TF Other Datasheet PDF
ON Semiconductor
2 Pages / 0.13 MByte
MJD112TF Drawing Diagrams
ON Semiconductor
2 Pages / 0.08 MByte
MJD112TF Application Note
ON Semiconductor
13 Pages / 0.34 MByte
MJD112TF Notice File
ON Semiconductor
2 Pages / 0.55 MByte
MJD112TF Other References
ON Semiconductor
1 Pages / 0.13 MByte

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