TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 8.00 A |
Case/Package | TO-252-3 |
Power Rating | 1.75 W |
Halogen Free Status | Halogen Free |
Output Voltage | 100 V |
Output Current | 8 A |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.75 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Thermal Resistance | 71.4℃/W (RθJA) |
Continuous Collector Current | 8A |
hFE Min | 1000 |
hFE Max | 12000 |
Input Power (Max) | 1.75 W |
DC Current Gain (hFE) | 2500 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Gain Bandwidth | 4MHz (Min) |
Power Dissipation (Max) | 1750 mW |
Input Voltage | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.38 mm |
Operating Temperature | -65℃ ~ 150℃ |
The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.
● Lead formed for surface mount applications in plastic sleeves
● High DC current gain
● Epoxy meets UL 94V-0 rating
● AEC-Q101 qualified
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