| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 5.00 A |
| Case/Package | TO-252-3 |
| Power Rating | 1.75 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @4A, 4V |
| Input Power (Max) | 20 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The device is manufactured using Epitaxial-base technology for high performance. PNP type is MJD127.
●Features
●■ Low base drive requirements
●■ Integrated antiparallel collector-emitter diode
●■ Through hole TO-251 (IPAK) power package in tube (suffix “-1”)
●■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”) Applications
●■ General purpose switching and amplifier
ST Microelectronics
12 Pages / 0.56 MByte
ST Microelectronics
13 Pages / 0.55 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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