| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 8.00 A |
| Case/Package | TO-252-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 8A |
| hFE Min | 1000 @4A, 4V |
| hFE Max | 12000 |
| Input Power (Max) | 1.75 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 1750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
● Lead formed for surface-mount applications in plastic sleeves
● Monolithic construction with built-in base-emitter shunt resistors
● Complementary pairs simplifies designs
● AEC-Q101 qualified and PPAP capable
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