| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -5.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @4A, 4V |
| Input Power (Max) | 20 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
The MJD127T4 is a PNP complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
● Low collector-emitter saturation voltage
● Integrated anti-parallel collector-emitter diode
ST Microelectronics
12 Pages / 0.56 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
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