MJD200T4G Datasheet PDF - ON Semiconductor

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS

●MJD200 (NPN)

●MJD210 (PNP)

●NPN/PNP Silicon DPAK For Surface Mount Applications

●Designed for low voltage, low−power, high−gain audio amplifier applications.

●Features

●•Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

●•High DC Current Gain − hFE = 70 (Min) @ IC= 500 mAdc

●                                                            =  45 (Min) @ IC= 2 Adc

●                                                             = 10 (Min) @ IC= 5 Adc

●•Lead Formed for Surface Mount Applications in Plastic Sleeves

●(No Suffix)

●•Low Collector−Emitter Saturation Voltage −VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc

●                                                                    = 0.75 Vdc (Max) @ IC= 2.0 Adc

●•High Current−Gain − Bandwidth Product −fT= 65 MHz (Min) @ IC= 100 mAdc

●•Annular Construction for Low Leakage −ICBO= 100 nAdc @ Rated VCB

●•Epoxy Meets UL 94 V−0 @ 0.125 in

●•ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V

●•Pb−Free Packages are Available