MJD253T4G Datasheet PDF - ON Semiconductor

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

●Features

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● Collector-Emitter Sustaining Voltage

●VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc

● High DC Current Gain

●hFE = 40 (Min) @ IC= 200 mAdc

●hFE= 15 (Min) @ IC = 1.0 Adc

● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

● Straight Lead Version in Plastic Sleeves ("-1" Suffix)

● Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)

● Low Collector-Emitter Saturation Voltage -

●VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

●VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc

● High Current-Gain-Bandwith Product -

●fT = 40MHz (Min) @ IC = 100 mAdc

● Annular Construction for Low Leakage -

●ICBO = 100 nAdc @ Rated VCB

● NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

● These are PbFree Packages