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MJD2955T4G
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MJD2955T4G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-252-3
Description:DPAK PNP 60V 10A
Documentation:MJD2955T4G Datasheet (6 Pages)Package Outline Dimension on5 Page6 Page
Package Footprint Pad Layout on5 Page
Part Numbering System on1 Page2 Page6 Page
MJD2955T4G Application Note (7 Pages)
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MJD2955T4G Datasheet PDF (6 Pages)
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MJD2955T4G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Frequency2 MHz
Number of Pins3 Pin
Voltage Rating (DC)-60.0 V
Current Rating-10.0 A
Case/PackageTO-252-3
Number of Positions3 Position
PolarityN-Channel, P-Channel
Power Dissipation1.75 W
Breakdown Voltage (Collector to Emitter)60 V
Continuous Collector Current10A
hFE Min20 @4A, 4V
Input Power (Max)1.75 W
DC Current Gain (hFE)5
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1750 mW
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MJD2955T4G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
MaterialSilicon
Size-Length6.73 mm
Size-Width6.22 mm
Size-Height2.38 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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MJD2955T4G Documents

MJD2955T4G Datasheet
ON Semiconductor
6 Pages / 0.07 MByte
MJD2955T4G Other Datasheet PDF
ON Semiconductor
8 Pages / 0.24 MByte
MJD2955T4G Application Note
ON Semiconductor
7 Pages / 0.12 MByte
MJD2955T4G Notice File
ON Semiconductor
5 Pages / 0.04 MByte
MJD2955T4G Other References
ON Semiconductor
1 Pages / 0.14 MByte

MJD2955T4 Documents

MJD2955T4 Datasheet PDF
ST Microelectronics
Trans GP BJT PNP 60V 10A 3Pin(2+Tab) DPAK T/R
MJD2955T4 Datasheet PDF
ON Semiconductor
Trans GP BJT PNP 60V 10A 3Pin(2+Tab) DPAK T/R
MJD2955T4G Datasheet PDF
ON Semiconductor
DPAK PNP 60V 10A
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