| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 2 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Gain Bandwidth Product | 2 MHz |
| Breakdown Voltage (Collector to Base) | 70.0 V |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 20 @4A, 4V |
| hFE Max | 100 |
| Input Power (Max) | 20 W |
| DC Current Gain (hFE) | 5 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
If you require a general purpose BJT that can handle high voltages, then the NPN MJD3055T4 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
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