TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 3.00 A |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 15 W |
Gain Bandwidth Product | 3 MHz |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 3A |
hFE Min | 10 @3A, 4V |
Input Power (Max) | 1.56 W |
DC Current Gain (hFE) | 10 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1560 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.38 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
The MJD31CT4G is a 3A NPN bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
● Electrically similar to popular TIP31 and TIP32 series
● AEC-Q101 qualified and PPAP capable
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