TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -3.00 A |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 15 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 10 @3A, 4V |
Input Power (Max) | 15 W |
DC Current Gain (hFE) | 50 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 15000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | 150℃ (TJ) |
The MJD32CT4 is a PNP low voltage Power Transistor manufactured using Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
● Surface-mount power package
● NPN complementary to the type is MJD31C
ST Microelectronics
13 Pages / 0.39 MByte
ST Microelectronics
4 Pages / 0.53 MByte
ST Microelectronics
10 Pages / 0.09 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.14 MByte
Motorola
SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15W
Fairchild
PNP Epitaxial Silicon Transistor
Micro Commercial Components
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, DPACK-3
ST Microelectronics
Low voltage PNP power transistor
Galaxy Semi-Conductor
Power Bipolar Transistor,
Jiangsu Changjiang Electronics Technology
Diodes
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
Taitron
Power Bipolar Transistor,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.