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MJD32CT4G
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MJD32CT4G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-252-3
Description:DPAK PNP 100V 3A
Documentation:MJD32CT4G Datasheet (11 Pages)Package Outline Dimension on10 Page11 Page
Package Footprint Pad Layout on10 Page
Part Numbering System on1 Page9 Page11 Page
MJD32CT4G Application Note (10 Pages)
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MJD32CT4G Datasheet PDF (11 Pages)
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MJD32CT4G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Frequency3 MHz
Number of Pins3 Pin
Voltage Rating (DC)-100 V
Current Rating-3.00 A
Case/PackageTO-252-3
Number of Positions4 Position
PolarityPNP
Power Dissipation1.56 W
Breakdown Voltage (Collector to Emitter)100 V
Continuous Collector Current3A
hFE Min10 @3A, 4V
Input Power (Max)1.56 W
DC Current Gain (hFE)10
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)1.56 W
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MJD32CT4G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
MaterialSilicon
Size-Length6.73 mm
Size-Width6.22 mm
Size-Height2.38 mm
Operating Temperature-65℃ ~ 150℃
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MJD32CT4G Documents

MJD32CT4G Datasheet
ON Semiconductor
11 Pages / 0.13 MByte
MJD32CT4G Other Datasheet PDF
ON Semiconductor
10 Pages / 0.09 MByte
MJD32CT4G Application Note
ON Semiconductor
10 Pages / 0.09 MByte
MJD32CT4G Notice File
ON Semiconductor
5 Pages / 0.04 MByte
MJD32CT4G Other References
ON Semiconductor
1 Pages / 0.14 MByte

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