| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -300 V |
| Current Rating | -500 mA |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 15 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| hFE Min | 30 @50mA, 10V |
| hFE Max | 240 |
| Input Power (Max) | 15 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 15000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
The MJD350T4 is a NPN-PNP complementary silicon Power Transistor manufactured using medium voltage Epitaxial Planar technology, resulting in a rugged high performance transistor.
● Surface-mount power package
● Electrical similar to MJE340 and MJE350
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