| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -6.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 6A |
| hFE Min | 15 @3A, 4V |
| Input Power (Max) | 1.75 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The MJD42CT4G is a 6A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
● Complementary device
● Electrically similar to popular TIP41 and TIP42 series
● AEC-Q101 qualified and PPAP capable
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
9 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.14 MByte
Motorola
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Jiangsu Changjiang Electronics Technology
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