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MJD44H11-1G
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MJD44H11-1G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-251-3
Description:IPAK NPN 80V 8A
Documentation:MJD44H11-1G Datasheet (9 Pages)Package Outline Dimension on8 Page9 Page
Package Footprint Pad Layout on8 Page
Part Numbering System on1 Page7 Page9 Page
MJD44H11-1G Application Note (13 Pages)
Pictures:
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MJD44H11-1G Datasheet PDF (9 Pages)
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MJD44H11-1G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency85 MHz
Number of Pins3 Pin
Voltage Rating (DC)80.0 V
Current Rating8.00 A
Case/PackageTO-251-3
Halogen Free StatusHalogen Free
Number of Positions3 Position
PolarityNPN
Power Dissipation20 W
Gain Bandwidth Product85 MHz
Breakdown Voltage (Collector to Emitter)80 V
Continuous Collector Current8A
hFE Min60
Input Power (Max)1.75 W
DC Current Gain (hFE)60
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)1750 mW
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MJD44H11-1G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
MaterialSilicon
Size-Length6.73 mm
Size-Width2.38 mm
Size-Height6.35 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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MJD44H11-1G Documents

MJD44H11-1G Datasheet
ON Semiconductor
9 Pages / 0.08 MByte
MJD44H11-1G Other Datasheet PDF
ON Semiconductor
7 Pages / 0.07 MByte
MJD44H11-1G Drawing Diagrams
ON Semiconductor
2 Pages / 0.08 MByte
MJD44H11-1G Application Note
ON Semiconductor
13 Pages / 0.34 MByte

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