| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 90 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -8.00 A |
| Case/Package | TO-252-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 8A |
| hFE Min | 40 @4A, 1V |
| Input Power (Max) | 1.75 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.75 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MJD45H11T4G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
● Electrically similar to popular D44H/D45H series
● Fast switching speeds
● Complementary pairs simplifies designs
● AEC-Q101 qualified and PPAP capable
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