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MJD45H11TM
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MJD45H11TM Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-252-3
Description:Trans GP BJT PNP 80V 8A 3Pin(2+Tab) DPAK T/R
Documentation:MJD45H11TM Datasheet (5 Pages)Package Outline Dimension on4 Page
Part Numbering System on1 Page
MJD45H11TM Application Note (13 Pages)
Pictures:
Symbol
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Product Pictures
MJD45H11TM Datasheet PDF (5 Pages)
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MJD45H11TM Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Frequency40 MHz
Number of Pins3 Pin
Case/PackageTO-252-3
Power Rating1.75 W
Number of Positions3 Position
Power Dissipation1.75 W
Breakdown Voltage (Collector to Emitter)80 V
hFE Min40 @4A, 1V
Input Power (Max)1.75 W
DC Current Gain (hFE)40
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1750 mW
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MJD45H11TM Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusUnknown
PackagingTape & Reel (TR)
MaterialSilicon
Operating Temperature-55℃ ~ 150℃
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MJD45H11TM Documents

MJD45H11TM Datasheet
ON Semiconductor
5 Pages / 0.15 MByte
MJD45H11TM Other Datasheet PDF
ON Semiconductor
18 Pages / 0.94 MByte
MJD45H11TM Drawing Diagrams
ON Semiconductor
2 Pages / 0.08 MByte
MJD45H11TM Application Note
ON Semiconductor
13 Pages / 0.34 MByte
MJD45H11TM Notice File
ON Semiconductor
7 Pages / 0.87 MByte
MJD45H11TM Other References
ON Semiconductor
1 Pages / 0.13 MByte

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