| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 40 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -8.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.75 W |
| Gain Bandwidth Product | 40 MHz |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 8A |
| hFE Min | 40 @4A, 1V |
| hFE Max | 60 |
| Input Power (Max) | 1.75 W |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.1 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | 150℃ (TJ) |
The MJD45H11TM is a PNP Epitaxial Silicon Transistor designed for general-purpose power and switching (such as output or driver stages) applications.
● Lead formed for surface-mount application
● Low collector emitter saturation voltage
● Fast switching speeds
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