| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 4.00 A |
| Case/Package | TO-220-3 |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| hFE Min | 8 @2A, 5V |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS
●These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
●SPECIFICATION FEATURES:
●•VCEO(sus) 400 V
●•Reverse Bias SOA with Inductive Loads @ TC= 100C
●•Inductive Switching Matrix 2 to 4 Amp, 25 and 100C
●tc@ 3A, 100C is 180 ns (Typ)
●•700 V Blocking Capability
●•SOA and Switching Applications Information.
ON Semiconductor
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ON Semiconductor
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