TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 70 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -150 V |
Current Rating | -8.00 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 50 W |
Gain Bandwidth Product | 30 MHz |
Breakdown Voltage (Collector to Emitter) | 150 V |
Thermal Resistance | 2.5℃/W (RθJC) |
Continuous Collector Current | 8A |
hFE Min | 20 @4A, 2V |
Input Power (Max) | 50 W |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 50000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.28 mm |
Size-Width | 4.83 mm |
Size-Height | 9.28 mm |
Operating Temperature | -65℃ ~ 150℃ |
The MJE15031G is a PNP silicon bipolar Power Transistor, designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth.
● Collector-emitter sustaining voltage of 150VDC
● UL94V-0 Flammability rating
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