MJE182 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	BJTs
Case Package:	TO-126-3
Description:	Trans GP BJT NPN 80V 3A 12500mW 3Pin(3+Tab) SOT-32 Tube
Documentation:	MJE182 Datasheet (6 Pages)Part Numbering System on6 Page MJE182 Application Note (6 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

MJE182 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Frequency	50 MHz
Number of Pins	3 Pin
Voltage Rating (DC)	100 V
Current Rating	3.00 A
Case/Package	TO-126-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	12.5 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @100mA, 1V
hFE Max	250
Input Power (Max)	12.5 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	12500 mW