| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 50 @100mA, 1V |
| Input Power (Max) | 1.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 8 mm |
| Size-Width | 3.25 mm |
| Size-Height | 11 mm |
| Operating Temperature | -65℃ ~ 150℃ |
Bipolar (BJT) Transistor NPN 80V 3A 50MHz 1.5W Through Hole TO-126-3
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