TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 40 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -4.00 A |
Case/Package | TO-126-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 15 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Thermal Resistance | 8.34℃/W (RθJC) |
Continuous Collector Current | 4A |
hFE Min | 40 @200mA, 1V |
hFE Max | 180 |
Input Power (Max) | 1.5 W |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 15000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 7.74 mm |
Size-Width | 2.66 mm |
Size-Height | 11.04 mm |
Operating Temperature | -65℃ ~ 150℃ |
The MJE253G is a -100V Silicon PNP Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications.
● High collector-emitter sustaining voltage
● High DC current gain
● Low collector emitter saturation voltage
● High current gain bandwidth
● Annular construction for low leakages
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