| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -10.0 A |
| Case/Package | TO-220-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 10A |
| hFE Min | 20 @4A, 4V |
| hFE Max | 100 |
| Input Power (Max) | 75 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS
●MJE2955T (PNP)
●MJE3055T (NPN)
●These devices are designed for use in general−purpose amplifier and switching applications.
●Features
●•DC Current Gain Specified to 10 A
●•High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min) @ IC= 500 mAdc
●•Pb−Free Packages are Available
ON Semiconductor
4 Pages / 0.05 MByte
ON Semiconductor
10 Pages / 0.15 MByte
Mospec
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