TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 60.0 V |
Current Rating | 10.0 A |
Case/Package | TO-220-3 |
Polarity | N-Channel |
Power Dissipation | 75.0 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 10A |
hFE Min | 20 @4A, 4V |
hFE Max | 100 |
Input Power (Max) | 75 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 50 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS
●MJE2955T (PNP)
●MJE3055T (NPN)
●These devices are designed for use in general−purpose amplifier and switching applications.
●Features
●•DC Current Gain Specified to 10 A
●•High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min) @ IC= 500 mAdc
●•Pb−Free Packages are Available
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