| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 75 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 20 @4A, 4V |
| Input Power (Max) | 600 mW |
| DC Current Gain (hFE) | 5 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 9.9 mm |
| Size-Width | 4.5 mm |
| Size-Height | 14.2 mm |
The MJE3055TTU is a NPN Silicon Transistor offers 70V collector base voltage and 10A collector current. It is suitable for general purpose and switching applications.
● DC current gain specified to IC = 10A
● 2MHz Minimum high current gain-bandwidth product fT
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