| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -300 V |
| Current Rating | -500 mA |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 20.8 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| hFE Min | 30 @50mA, 10V |
| Input Power (Max) | 20.8 W |
| DC Current Gain (hFE) | 240 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | 150℃ (TJ) |
The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the MJE340
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
8 Pages / 0.58 MByte
ST Microelectronics
6 Pages / 0.13 MByte
ST Microelectronics
3 Pages / 0.09 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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