| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| hFE Min | 30 @50mA, 10V |
| Input Power (Max) | 20 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 8 mm |
| Size-Width | 3.25 mm |
| Size-Height | 11 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The MJE350STU is a PNP Epitaxial Silicon Transistor offers 300V collector base voltage and 500mA collector current. It is suitable for transformer and high voltage general purpose applications.
● High collector-emitter breakdown voltage
● Complement to MJE340
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