| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -400 V |
| Current Rating | -8.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 80 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Thermal Resistance | 1.25℃/W (RθJC) |
| Continuous Collector Current | 8A |
| hFE Min | 5 @5A, 5V |
| Input Power (Max) | 80 W |
| DC Current Gain (hFE) | 15 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.28 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
● Fast turn-off times
● Complementary to the MJE13007 series
● 6V Emitter to base voltage (VEBO)
● 16ADC Peak collector current
● 4ADC Base current (IB)
● 1.25°C/W Thermal resistance, junction to case
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