TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | -60.0 V |
Current Rating | -4.00 A |
Case/Package | TO-225-3 |
Polarity | Dual P-Channel |
Power Dissipation | 40.0 W |
Breakdown Voltage (Collector to Emitter) | -60.0 V |
Continuous Collector Current | 4A |
hFE Min | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 7.74 mm |
Size-Width | 2.66 mm |
Size-Height | 11.04 mm |
Minimum Packing Quantity | 500 |
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
●Features
●---
● |
● High DC Current Gain -
●hFE = 2000 (Typ) @ IC = 2.0 Adc
● Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
● Choice of Packages -
●MJE700 and MJE800 series
● Pb-Free Packages are Available
ON Semiconductor
4 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.13 MByte
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