MJH11017G Datasheet PDF - ON Semiconductor

Complementary Darlington Silicon Power Transistors

●These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

●Features

●• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

●• Collector−Emitter Sustaining Voltage

●   VCEO(sus) = 150 Vdc (Min) — MJH11018, 17

●                 = 200 Vdc (Min) — MJH11020, 19

●                 = 250 Vdc (Min) — MJH11022, 21

●• Low Collector−Emitter Saturation Voltage

●   VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

●               = 1.8 V (Typ) @ IC = 10 A

●• Monolithic Construction

●• Pb−Free Packages are Available