| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 250 V |
| Current Rating | 16.0 A |
| Case/Package | TO-247-3 |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Gain Bandwidth Product | 4 MHz |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 16A |
| hFE Min | 20 @8A, 5V |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
●MJW21193 (PNP)
●MJW21194 (NPN)
●The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
●•Total Harmonic Distortion Characterized
●•High DC Current Gain −hFE= 20 Min @ IC= 8 Adc
●•Excellent Gain Linearity
●•High SOA: 2.25 A, 80 V, 1 Second
ON Semiconductor
8 Pages / 0.06 MByte
ON Semiconductor
10 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
8 Pages / 0.11 MByte
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