| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 4 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -250 V |
| Current Rating | -16.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 16A |
| hFE Min | 20 @8A, 5V |
| hFE Max | 80 |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The MJW21195G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
● Total harmonic distortion characterized
● High DC current gain
● Excellent gain linearity
● High SOA
ON Semiconductor
7 Pages / 0.15 MByte
ON Semiconductor
9 Pages / 0.22 MByte
ON Semiconductor
2 Pages / 0.05 MByte
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