| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Power Dissipation | 300 mW |
| Threshold Voltage | 2.1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 24pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
The MMBF170 is a N-channel enhancement-mode FET produced using Fairchild"s proprietary high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
ON Semiconductor
16 Pages / 1.36 MByte
ON Semiconductor
16 Pages / 1.36 MByte
ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
3 Pages / 0.48 MByte
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