| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -25.0 V |
| Current Rating | -20.0 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 225 mW |
| Halogen Free Status | Halogen Free |
| Breakdown Voltage | 30.0 V |
| Drain to Source Resistance (on) (Rds) | 300 Ω |
| Polarity | P-Channel |
| Power Dissipation | 225 mW |
| Input Capacitance | 11.0 pF |
| Drain to Source Voltage (Vds) | 25.0 V |
| Breakdown Voltage (Gate to Source) | 30 V |
| Continuous Drain Current (Ids) | 20.0 mA |
| Reverse Breakdown Voltage | 30 V |
| Input Capacitance (Ciss) | 11pF @10V(Vgs) |
| Input Power (Max) | 225 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The MMBFJ177LT1G is a P-channel JFET designed for analogue switching and chopper applications. The low RDS (ON) provides higher efficiency and extends battery life. The device is encapsulated in a surface-mount package which saves board space.
● -25V Drain-gate voltage
● 25V Gate-source voltage
ON Semiconductor
3 Pages / 0.05 MByte
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5 Pages / 0.2 MByte
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JFET P-CH 30V 225mW SOT23
ON Semiconductor
ON SEMICONDUCTOR MMBFJ177LT1G JFET Transistor, JFET, 30V, -1.5mA, -20mA, 2.5V, SOT-23, JFET
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