TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -25.0 V |
Current Rating | 30 mA |
Case/Package | SOT-23-3 |
Power Rating | 225 mW |
Halogen Free Status | Halogen Free |
Breakdown Voltage | -25.0 V |
Polarity | N-Channel |
Power Dissipation | 225 mW |
Input Capacitance | 5 pf |
Drain to Source Voltage (Vds) | 25 V |
Breakdown Voltage (Gate to Source) | 25.0 V |
Continuous Drain Current (Ids) | 10.0 mA |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 225 mW |
Voltage Rating | 25 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.01 mm |
Operating Temperature | -55℃ ~ 150℃ |
The MMBFJ309LT1G is a N-channel JFET designed for high frequency amplifiers and oscillators. The device offers interchangeable drain and source, space saving surface-mount package. The Low RDS (ON) provides higher efficiency and extends battery life.
● 25VDC Drain-source voltage
● 25VDC Gate-source voltage
● 10mA Gate current
ON Semiconductor
7 Pages / 0.29 MByte
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Motorola
JFET VHF/UHF Amplifier Transistor
ON Semiconductor
ON SEMICONDUCTOR MMBFJ309LT1G JFET Transistor, JFET, -25V, 12mA, 30mA, -4V, SOT-23, JFET
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